Vishay TrenchFET N-Channel MOSFET, 67.4 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3

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Subtotal (1 pack of 25 units)*

TWD407.50

(exc. GST)

TWD428.00

(inc. GST)

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Units
Per unit
Per Pack*
25 - 25TWD16.30TWD407.50
50 - 75TWD16.00TWD400.00
100 - 225TWD15.50TWD387.50
250 - 975TWD15.10TWD377.50
1000 +TWD14.80TWD370.00

*price indicative

Packaging Options:
RS Stock No.:
228-2929
Mfr. Part No.:
SiSH536DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

67.4A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212-8SH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.25mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

26.5W

Maximum Gate Source Voltage Vgs

16V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.6nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 30 V (D-S) MOSFET.

100 % Rg and UIS tested

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