Vishay TrenchFET Type N-Channel MOSFET, 185.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS54DN-T1-GE3

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Subtotal (1 pack of 5 units)*

TWD325.00

(exc. GST)

TWD341.25

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45TWD65.00TWD325.00
50 - 95TWD63.20TWD316.00
100 - 245TWD61.60TWD308.00
250 - 995TWD59.60TWD298.00
1000 +TWD57.60TWD288.00

*price indicative

Packaging Options:
RS Stock No.:
228-2933
Mfr. Part No.:
SiSS54DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

185.6A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.06mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

47.5nC

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 30-V (D-S) MOSFET.

100 % Rg and UIS tested

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