onsemi NTS2101P Type P-Channel MOSFET, 1.5 A, 8 V Enhancement, 3-Pin SOT-323 NTS2101PT1G
- RS Stock No.:
- 780-4755
- Mfr. Part No.:
- NTS2101PT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD200.00
(exc. GST)
TWD210.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Supply shortage
- 75 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD8.00 | TWD200.00 |
| 750 - 1475 | TWD7.80 | TWD195.00 |
| 1500 + | TWD7.60 | TWD190.00 |
*price indicative
- RS Stock No.:
- 780-4755
- Mfr. Part No.:
- NTS2101PT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 8V | |
| Series | NTS2101P | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Power Dissipation Pd | 330mW | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 8V | ||
Series NTS2101P | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Power Dissipation Pd 330mW | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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