ROHM RSF010P05 Type P-Channel MOSFET, 1 A, 45 V Enhancement, 3-Pin SOT-323 RSF010P05TL
- RS Stock No.:
- 133-2841
- Mfr. Part No.:
- RSF010P05TL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD340.00
(exc. GST)
TWD357.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Being discontinued
- Final 2,900 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | TWD13.60 | TWD340.00 |
| 125 - 225 | TWD13.20 | TWD330.00 |
| 250 - 1225 | TWD12.80 | TWD320.00 |
| 1250 - 2475 | TWD12.60 | TWD315.00 |
| 2500 + | TWD12.20 | TWD305.00 |
*price indicative
- RS Stock No.:
- 133-2841
- Mfr. Part No.:
- RSF010P05TL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Series | RSF010P05 | |
| Package Type | SOT-323 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 690mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 800mW | |
| Typical Gate Charge Qg @ Vgs | 2.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Standards/Approvals | RoHS | |
| Height | 0.82mm | |
| Width | 1.8 mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 45V | ||
Series RSF010P05 | ||
Package Type SOT-323 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 690mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 800mW | ||
Typical Gate Charge Qg @ Vgs 2.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Standards/Approvals RoHS | ||
Height 0.82mm | ||
Width 1.8 mm | ||
- COO (Country of Origin):
- JP
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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