ROHM RU1C002ZP Type P-Channel MOSFET, 200 mA, 20 V Enhancement, 3-Pin SOT-323 RU1C002ZPTCL
- RS Stock No.:
- 124-6835
- Mfr. Part No.:
- RU1C002ZPTCL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 100 units)*
TWD290.00
(exc. GST)
TWD304.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Plus 500 unit(s) shipping from January 26, 2026
- Final 1,600 unit(s) shipping from February 02, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | TWD2.90 | TWD290.00 |
| 500 - 900 | TWD2.80 | TWD280.00 |
| 1000 - 2400 | TWD2.70 | TWD270.00 |
| 2500 - 4900 | TWD2.70 | TWD270.00 |
| 5000 + | TWD2.60 | TWD260.00 |
*price indicative
- RS Stock No.:
- 124-6835
- Mfr. Part No.:
- RU1C002ZPTCL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | RU1C002ZP | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Maximum Power Dissipation Pd | 150mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series RU1C002ZP | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Maximum Power Dissipation Pd 150mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Width 1.35 mm | ||
Automotive Standard No | ||
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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