Infineon BSS Type P-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1
- RS Stock No.:
- 250-0554
- Mfr. Part No.:
- BSS209PWH6327XTSA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
TWD42.00
(exc. GST)
TWD44.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 10,930 unit(s) shipping from January 26, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD4.20 | TWD42.00 |
| 20 - 90 | TWD3.80 | TWD38.00 |
| 100 - 240 | TWD3.30 | TWD33.00 |
| 250 - 490 | TWD3.10 | TWD31.00 |
| 500 + | TWD2.80 | TWD28.00 |
*price indicative
- RS Stock No.:
- 250-0554
- Mfr. Part No.:
- BSS209PWH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.28A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-323 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.28A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-323 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS-P Small-Signal-Transistor with super logic level of 2.5 V (rated). The operating temperature is 150°C. It is Avalanche and dv /dt rated. It is Pb-free with lead plating, Halogen-free.
VDS is -20 V, RDS(on),max 550 mΩ and Id is -0.63 A
Maximum power dissipation is 500mW
Related links
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