Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- RS Stock No.:
- 178-7472
- Mfr. Part No.:
- BSS138NH6327XTSA2
- Manufacturer:
- Infineon
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TWD6,600.00
(exc. GST)
TWD6,930.00
(inc. GST)
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- 255,000 unit(s) shipping from August 13, 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | TWD2.20 | TWD6,600.00 |
| 15000 + | TWD2.10 | TWD6,300.00 |
*price indicative
- RS Stock No.:
- 178-7472
- Mfr. Part No.:
- BSS138NH6327XTSA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 0.83V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 0.83V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 3.5Ω Maximum Drain Source Resistance - BSS138NH6433XTMA1
This MOSFET is a compact N-channel transistor designed for low-current switching in surface-mount applications. It operates across a wide temperature range, making it suitable for environments that demand extended thermal tolerance. The device is built for use where controlled enhancement-mode switching and modest power handling are required.
Features and Benefits:
• 60V drain voltage enables use in intermediate-voltage systems
• 3.5Ω low Rds(on) reduces conduction losses in small-signal circuits
• 230mA continuous drain current supports low-power switching loads
• 1nC typical gate charge allows fast gate transitions with minimal drive energy
• 360mW power dissipation helps manage thermal loading in constrained designs
• 20V maximum gate rating protects against excessive drive voltages
• 3.5Ω low Rds(on) reduces conduction losses in small-signal circuits
• 230mA continuous drain current supports low-power switching loads
• 1nC typical gate charge allows fast gate transitions with minimal drive energy
• 360mW power dissipation helps manage thermal loading in constrained designs
• 20V maximum gate rating protects against excessive drive voltages
Applications
• Suitable for automotive sensor signal switching
• Ideal for handheld instrument power management
• Used with control logic in telematics modules
• Can be used for load switching in battery-operated devices
• Suitable for general-purpose small-signal switching on PCBs
• Ideal for handheld instrument power management
• Used with control logic in telematics modules
• Can be used for load switching in battery-operated devices
• Suitable for general-purpose small-signal switching on PCBs
What mounting style is required for this component?
It uses a SOT-23 package intended for surface-mount placement on printed circuit assemblies.
How does it cope with elevated operating temperatures?
The device is specified to function from -55°C up to 150°C, permitting use in high-temperature environments with appropriate thermal design.
What gate drive considerations should be observed?
Keep gate voltage within ±20V to avoid overstressing the gate oxide and ensure gate-drive circuits supply sufficient current for the 1nC typical gate charge.
Is this device suitable for high-current power stages?
It is intended for small-signal and low-current switching
the 230mA continuous drain current and 3.5Ω Rds(on) limit its suitability for high-current power stages.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1
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