Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1
- RS Stock No.:
- 826-9276
- Distrelec Article No.:
- 304-44-411
- Mfr. Part No.:
- BSP125H6327XTSA1
- Manufacturer:
- Infineon
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TWD1,255.00
(exc. GST)
TWD1,318.00
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | TWD25.10 | TWD1,255.00 |
| 250 - 450 | TWD24.40 | TWD1,220.00 |
| 500 + | TWD24.10 | TWD1,205.00 |
*price indicative
- RS Stock No.:
- 826-9276
- Distrelec Article No.:
- 304-44-411
- Mfr. Part No.:
- BSP125H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 120mA Maximum Continuous Drain Current - BSP125H6327XTSA1
This MOSFET is a high-voltage N-channel switching device designed for surface-mounted power applications in demanding environments. It operates across a wide temperature range and is intended for circuits requiring high drain‑to‑source blocking capability and controlled switching behaviour. The package supports automated PCB assembly and is suited to electronic systems in transportation and industrial contexts.
Features and Benefits:
• 600V drain‑source rating enables high-voltage switching capability
• 45Ω maximum Rds reduces leakage in off-state conditions
• 4.4nC typical gate charge for faster gate transitions
• 120mA continuous drain current for low-current power stages
• 0.8V forward voltage minimises conduction drop in diode path
• 1.8W maximum dissipation supports modest power handling
• 45Ω maximum Rds reduces leakage in off-state conditions
• 4.4nC typical gate charge for faster gate transitions
• 120mA continuous drain current for low-current power stages
• 0.8V forward voltage minimises conduction drop in diode path
• 1.8W maximum dissipation supports modest power handling
Applications
• Suitable for automotive high-voltage auxiliary circuits
• Ideal for input-stage switching in power supplies
• Used with industrial sensor interfaces requiring isolation
• Can be used for small motor driver protection elements
• Practical for battery management and charging subsystems
• Ideal for input-stage switching in power supplies
• Used with industrial sensor interfaces requiring isolation
• Can be used for small motor driver protection elements
• Practical for battery management and charging subsystems
What mounting method is required for board assembly?
It is supplied in a surface-mount SOT-223 style package intended for soldered PCB attachment and reflow processes.
How does it behave across temperature extremes?
Rated to operate from -55°C to 150°C, the device maintains switching function and specified limits throughout that thermal span.
What gate voltage limits should designers observe?
The maximum gate‑to‑source voltage is 20V, so drive circuits must not exceed this amplitude to avoid damage.
Are there constraints on pulse versus continuous current?
The specified continuous drain capability is 120mA
higher transient currents would require thermal and safe‑operating‑area assessment.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1
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- Infineon BSP135I Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
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- Infineon SIPMOS Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223
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