Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Enhancement, 4-Pin SOT-223
- RS Stock No.:
- 165-5811
- Mfr. Part No.:
- BSP125H6327XTSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 reel of 1000 units)*
TWD11,100.00
(exc. GST)
TWD11,660.00
(inc. GST)
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 4000 | TWD11.10 | TWD11,100.00 |
| 5000 + | TWD10.70 | TWD10,700.00 |
*price indicative
- RS Stock No.:
- 165-5811
- Mfr. Part No.:
- BSP125H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 120mA Maximum Continuous Drain Current - BSP125H6327XTSA1
This MOSFET is a high-voltage N-channel switching device designed for surface-mounted power applications in demanding environments. It operates across a wide temperature range and is intended for circuits requiring high drain‑to‑source blocking capability and controlled switching behaviour. The package supports automated PCB assembly and is suited to electronic systems in transportation and industrial contexts.
Features and Benefits:
• 600V drain‑source rating enables high-voltage switching capability
• 45Ω maximum Rds reduces leakage in off-state conditions
• 4.4nC typical gate charge for faster gate transitions
• 120mA continuous drain current for low-current power stages
• 0.8V forward voltage minimises conduction drop in diode path
• 1.8W maximum dissipation supports modest power handling
• 45Ω maximum Rds reduces leakage in off-state conditions
• 4.4nC typical gate charge for faster gate transitions
• 120mA continuous drain current for low-current power stages
• 0.8V forward voltage minimises conduction drop in diode path
• 1.8W maximum dissipation supports modest power handling
Applications
• Suitable for automotive high-voltage auxiliary circuits
• Ideal for input-stage switching in power supplies
• Used with industrial sensor interfaces requiring isolation
• Can be used for small motor driver protection elements
• Practical for battery management and charging subsystems
• Ideal for input-stage switching in power supplies
• Used with industrial sensor interfaces requiring isolation
• Can be used for small motor driver protection elements
• Practical for battery management and charging subsystems
What mounting method is required for board assembly?
It is supplied in a surface-mount SOT-223 style package intended for soldered PCB attachment and reflow processes.
How does it behave across temperature extremes?
Rated to operate from -55°C to 150°C, the device maintains switching function and specified limits throughout that thermal span.
What gate voltage limits should designers observe?
The maximum gate‑to‑source voltage is 20V, so drive circuits must not exceed this amplitude to avoid damage.
Are there constraints on pulse versus continuous current?
The specified continuous drain capability is 120mA
higher transient currents would require thermal and safe‑operating‑area assessment.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1
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