Infineon SIPMOS Type N-Channel MOSFET, 1.8 A, 60 V Enhancement, 4-Pin SOT-223 BSP295H6327XTSA1
- RS Stock No.:
- 445-2269
- Mfr. Part No.:
- BSP295H6327XTSA1
- Manufacturer:
- Infineon
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TWD183.00
(exc. GST)
TWD192.15
(inc. GST)
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- 345 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 245 | TWD36.60 | TWD183.00 |
| 250 - 495 | TWD36.00 | TWD180.00 |
| 500 + | TWD33.60 | TWD168.00 |
*price indicative
- RS Stock No.:
- 445-2269
- Mfr. Part No.:
- BSP295H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 1.8A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP295H6327XTSA1
This MOSFET is engineered for high-performance applications in automation and electronics. Its N-channel configuration combined with an efficient surface mount design allows for effective current control, making it suitable for a range of industrial applications. It supports a maximum drain-source voltage of 60V, ensuring consistent performance for various projects.
Features & Benefits
• Continuously handles a drain current of 1.8A
• Low maximum drain-source resistance of 300mΩ
• Wide gate-source voltage range from -20V to +20V
• Qualified to AEC-Q101 automotive standard for reliability
Applications
• Power management systems for efficient output control
• Motor drives for reliable switching operations
• Signal amplification in various electronic devices
• Automotive electronic control units
What is the typical power dissipation of the component?
It can dissipate up to 1.8W under specified conditions for effective heat management during operation.
How does the gate threshold voltage affect performance?
The maximum gate threshold voltage is 1.8V, which enables the MOSFET to achieve optimal performance at low input levels.
Can this component handle pulsed drain currents?
Yes, it is rated for pulsed drain current up to 6A, allowing it to effectively manage transient conditions.
What packaging options are available?
The MOSFET is available in a SOT-223 surface mount package, optimised for space-efficient designs.
Is the device compliant with environmental standards?
It features Pb-free lead plating and adheres to RoHS compliance, meeting contemporary environmental regulations.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
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- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
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