Infineon SIPMOS Type N-Channel MOSFET, 170 mA, 400 V Enhancement, 4-Pin SOT-223
- RS Stock No.:
- 165-5810
- Mfr. Part No.:
- BSP324H6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 1000 units)*
TWD13,300.00
(exc. GST)
TWD13,960.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Shipping from October 12, 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 4000 | TWD13.30 | TWD13,300.00 |
| 5000 + | TWD13.00 | TWD13,000.00 |
*price indicative
- RS Stock No.:
- 165-5810
- Mfr. Part No.:
- BSP324H6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 25Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.54nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 25Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.54nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon SIPMOS Series MOSFET, 400V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP324H6327XTSA1
Features and Benefits:
• 25Ω maximum Rds(on) reduces conduction losses in low-current circuits
• 170mA continuous drain current supports small-signal power tasks
• 1.8W maximum power dissipation manages moderate thermal loads
• 4.54nC typical gate charge allows faster gate transitions with less drive energy
• 0.8V forward voltage improves diode drop efficiency in switching events
Applications
• Ideal for high-voltage control in power-supply snubber networks
• Used with gate drivers for low-current switching stages
• Can be used for load protection in sensing modules
• Appropriate for surface-mount assemblies in compact power designs
What temperature range can it operate across?
How many pins and what mounting style are offered?
What gate voltage limits must be observed during design?
What package footprint and external sizing should designers expect?
Related links
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- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
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- Infineon SIPMOS Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223 BSP297H6327XTSA1
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