Infineon SIPMOS Type N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223 BSP373NH6327XTSA1
- RS Stock No.:
- 752-8224
- Distrelec Article No.:
- 304-45-302
- Mfr. Part No.:
- BSP373NH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD162.00
(exc. GST)
TWD170.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 100 unit(s) ready to ship from another location
- Plus 3,535 unit(s) shipping from June 18, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 245 | TWD32.40 | TWD162.00 |
| 250 - 495 | TWD31.80 | TWD159.00 |
| 500 + | TWD30.00 | TWD150.00 |
*price indicative
- RS Stock No.:
- 752-8224
- Distrelec Article No.:
- 304-45-302
- Mfr. Part No.:
- BSP373NH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- onsemi QFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 FQT7N10LTF
- onsemi QFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 400 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 400 V Enhancement, 4-Pin SOT-223 BSP324H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223