Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3

RS Stock No.:: 279-9913
Mfr. Part No.:: SIHH150N60E-T1-GE3
Manufacturer:: Vishay

Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3

The image is for reference only, please refer to product details and specifications

Subtotal (1 reel of 3000 units)*

TWD317,400.00

(exc. GST)

TWD333,270.00

(inc. GST)

FREE delivery for orders over NT$1,300.00

In Stock

3,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	TWD105.80	TWD317,400.00

*price indicative

RS Stock No.:: 279-9913
Mfr. Part No.:: SIHH150N60E-T1-GE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	600V
	Series	SIHH
	Package Type	PowerPAK 8 x 8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	156W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	8mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 600V
	Series SIHH
	Package Type PowerPAK 8 x 8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 156W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 8mm
	Automotive Standard No

Datasheet - SIHH150N60E-T1-GE3

Vishay SIHH Series MOSFET, 600V Maximum Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHH150N60E-T1-GE3

This MOSFET is a high-voltage N-channel device designed for power switching in surface-mount assemblies. It operates over a wide temperature span and supports substantial continuous current, making it suitable for demanding electronic systems that require robust voltage handling and thermal endurance.

Features and Benefits:

• 600V rating enables high-voltage switching applications
• 19A continuous drain current supports significant load currents
• 0.158 Ω low on-resistance reduces conduction losses
• 156W power dissipation allows elevated thermal loading
• 36 nC gate charge provides predictable switching performance
• Vgs 30V gate limit offers gate overvoltage protection

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for switch-mode power supplies in industrial equipment
• Used with motor drives requiring strong current capability
• Can be used for rugged power switching in telecoms systems
• Suitable for compact surface-mount power modules

What thermal conditions can it withstand during operation?

It is rated for operation from -55 °C up to 150 °C, allowing use in environments with extreme temperature ranges.

What mounting type is required for PCB integration?

It is supplied in a PowerPAK 8x8 surface-mount package intended for direct PCB soldering.

How many electrical connections does the component provide?

The device has a four-pin configuration to interface with gate, drain and source layout requirements.

What channel conduction mode does it use for switching?

It is an enhancement-mode N-channel device, conducting when a positive gate-source voltage is applied.