Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- RS Stock No.:
- 268-8303
- Mfr. Part No.:
- SIHH250N60EF-T1GE3
- Manufacturer:
- Vishay
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TWD292.00
(exc. GST)
TWD306.60
(inc. GST)
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In Stock
- Plus 3,000 unit(s) shipping from June 15, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD146.00 | TWD292.00 |
| 50 - 98 | TWD131.50 | TWD263.00 |
| 100 - 248 | TWD107.50 | TWD215.00 |
| 250 + | TWD105.00 | TWD210.00 |
*price indicative
- RS Stock No.:
- 268-8303
- Mfr. Part No.:
- SIHH250N60EF-T1GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | SIHH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.25Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 8 x 8 | ||
Series SIHH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.25Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 13A Continuous Drain Current - SIHH250N60EF-T1GE3
This MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in industrial electrical systems. It is intended for surface-mounted assemblies where robust voltage handling and thermal endurance are required, and it operates across a wide temperature range to suit demanding environments.
Features and Benefits:
• 650V drain capability enables high-voltage switching applications • 13A continuous drain current supports substantial load currents • 0.25Ω Rds(on) reduces conduction losses during operation • 23nC typical gate charge allows controlled switching dynamics • 30V maximum gate drive tolerance accommodates standard gate drivers • 89W power dissipation permits sustained thermal loading
Applications
• Suitable for high-voltage power switching in industrial drives • Ideal for switch-mode power supplies requiring high Vds • Used for motor inverter stages handling moderate currents • Can be used for power factor correction modules in plant equipment
What mounting format is required for circuit assembly?
It uses a PowerPAK 8x8 surface package with four pins intended for low-inductance PCB mounting.
How does the device behave under extreme temperatures?
It is specified to operate from -55°C up to 150°C, allowing use in installations with wide thermal variation.
What is the maximum voltage between drain and source?
The maximum drain-source voltage rating is 650V, defining the upper limit for steady-state blocking voltage.
What gate drive limitations should be observed?
The gate-source voltage must not exceed 30V to avoid damaging the gate oxide.
Are there regulatory material restrictions noted?
The component is listed as RoHS-compliant, indicating restriction of certain hazardous substances.
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