Vishay SIHH N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
- RS Stock No.:
- 268-8300
- Mfr. Part No.:
- SIHH085N60EF-T1GE3
- Manufacturer:
- Vishay
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TWD299.00
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TWD313.95
(inc. GST)
- RS Stock No.:
- 268-8300
- Mfr. Part No.:
- SIHH085N60EF-T1GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | SIHH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 184W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 8 x 8 | ||
Series SIHH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 184W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
Vishay SIHH Series MOSFET, 650V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - SIHH085N60EF-T1GE3
This MOSFET is a high-voltage N-channel switching transistor designed for surface-mounted power applications. It operates across a wide temperature span and is suited to systems requiring robust drain-source voltage tolerance and substantial continuous current handling. The device meets RoHS requirements and is supplied in a compact PowerPAK 8x8 package for low-profile board mounting.
Features and Benefits:
• 650V drain-source rating for elevated-voltage switching
• 30A continuous drain current for sustained load handling
• 0.085Ω Rds(on) for reduced conduction losses
• 184W maximum dissipation for high-power thermal margin
• ±30V gate tolerance to accommodate varied gate-drive levels
• 63nC gate charge enabling predictable switching energy
• 30A continuous drain current for sustained load handling
• 0.085Ω Rds(on) for reduced conduction losses
• 184W maximum dissipation for high-power thermal margin
• ±30V gate tolerance to accommodate varied gate-drive levels
• 63nC gate charge enabling predictable switching energy
Applications
• Suitable for high-voltage power supplies and inverters
• Ideal for motor-drive front-end switching stages
• Used with DC-DC converters requiring high power handling
• Can be used for industrial switch-mode power supplies
• Suitable for telecoms and server power-conversion modules
• Ideal for motor-drive front-end switching stages
• Used with DC-DC converters requiring high power handling
• Can be used for industrial switch-mode power supplies
• Suitable for telecoms and server power-conversion modules
What thermal environment can it tolerate during operation?
The device is specified to function from -55°C up to 150°C, allowing deployment in demanding thermal conditions when paired with appropriate thermal management.
How does the package support board-level implementation?
The PowerPAK 8x8 surface-mount format provides a low-profile footprint with a four-pin arrangement suited to automated assembly and efficient PCB thermal routing.
What is the channel mode and its implication for circuit design?
It is an enhancement-mode N-channel device, so it requires a positive gate-to-source drive to switch on, enabling straightforward high-side or low-side switching topologies with appropriate gate drivers.
Are there environmental or regulatory material considerations?
The component conforms to RoHS material restrictions, indicating it is free from certain restricted substances for compliance-driven designs.
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