Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- RS Stock No.:
- 279-9914
- Mfr. Part No.:
- SIHH150N60E-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 unit)*
TWD225.00
(exc. GST)
TWD236.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 3,000 unit(s) ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 49 | TWD225.00 |
| 50 - 99 | TWD219.00 |
| 100 - 249 | TWD216.00 |
| 250 - 999 | TWD211.00 |
| 1000 + | TWD207.00 |
*price indicative
- RS Stock No.:
- 279-9914
- Mfr. Part No.:
- SIHH150N60E-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHH | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 156W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHH | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 156W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHH Series MOSFET, 600V Maximum Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHH150N60E-T1-GE3
Features and Benefits:
• 19A continuous drain current supports significant load currents
• 0.158 Ω low on-resistance reduces conduction losses
• 156W power dissipation allows elevated thermal loading
• 36 nC gate charge provides predictable switching performance
• Vgs 30V gate limit offers gate overvoltage protection
Applications
• Ideal for switch-mode power supplies in industrial equipment
• Used with motor drives requiring strong current capability
• Can be used for rugged power switching in telecoms systems
• Suitable for compact surface-mount power modules
What thermal conditions can it withstand during operation?
What mounting type is required for PCB integration?
How many electrical connections does the component provide?
What channel conduction mode does it use for switching?
Related links
- Vishay SIHH Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- Vishay SIHH Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH075N65E-T1-GE3
- Vishay SIEH3812EW N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 8 x 8 SIEH3812EW-T1-GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
