Infineon OptiMOS N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin PG-TO252-3 IPD95R1K2P7ATMA1
- RS Stock No.:
- 273-2786
- Mfr. Part No.:
- IPD95R1K2P7ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 5 units)*
TWD390.00
(exc. GST)
TWD409.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 80 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD78.00 | TWD390.00 |
| 50 - 95 | TWD70.80 | TWD354.00 |
| 100 - 245 | TWD64.80 | TWD324.00 |
| 250 - 995 | TWD60.00 | TWD300.00 |
| 1000 + | TWD55.80 | TWD279.00 |
*price indicative
- RS Stock No.:
- 273-2786
- Mfr. Part No.:
- IPD95R1K2P7ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 52W Power Dissipation, 950V Drain-Source Voltage - IPD95R1K2P7ATMA1
Features and Benefits:
• 6A continuous drain current supporting medium-power loads
• 52W power dissipation for thermal handling in converters
• 1.2Ω RDS(on) minimising conduction losses at low frequencies
• 15nC typical gate charge enabling controlled switching transitions
Applications
• Ideal for low-frequency switching in industrial supplies
• Used with surface-mount boards requiring Compact power devices
• Can be used for systems operating from -55°C to 150°C
• Used for discrete switching stages in power management
What gate voltage limits must be observed for correct operation?
How does the device perform across temperature extremes?
What package and mounting method does it use?
Is this component suitable for automotive standard compliance?
Related links
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