Infineon OptiMOS N-Channel MOSFET, 73 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD040N03LF2SATMA1
- RS Stock No.:
- 349-430
- Mfr. Part No.:
- IPD040N03LF2SATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 90 | TWD41.30 | TWD413.00 | - |
| 100 - 240 | TWD39.30 | TWD393.00 | TWD200.00 |
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| 500 - 990 | TWD33.40 | TWD334.00 | TWD3,950.00 |
| 1000 + | TWD32.20 | TWD322.00 | TWD9,100.00 |
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- RS Stock No.:
- 349-430
- Mfr. Part No.:
- IPD040N03LF2SATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.05mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.05mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 4 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.
General purpose products
Excellent robustness
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
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