Infineon OptiMOS N-Channel MOSFET, 4.7 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R1K0PFD7SAUMA1

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Subtotal (1 pack of 10 units)*

TWD295.00

(exc. GST)

TWD309.80

(inc. GST)

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Units
Per unit
Per Pack*
10 - 40TWD29.50TWD295.00
50 - 90TWD25.10TWD251.00
100 - 240TWD23.40TWD234.00
250 - 990TWD22.80TWD228.00
1000 +TWD22.40TWD224.00

*price indicative

RS Stock No.:
273-3010
Mfr. Part No.:
IPD60R1K0PFD7SAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

600V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

26W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD pac

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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