Infineon OptiMOS N-Channel MOSFET, 71 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD047N03LF2SATMA1
- RS Stock No.:
- 348-899
- Mfr. Part No.:
- IPD047N03LF2SATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 20 - 180 | TWD36.30 | TWD726.00 | - |
| 200 - 480 | TWD34.50 | TWD690.00 | TWD360.00 |
| 500 + | TWD32.00 | TWD640.00 | TWD2,150.00 |
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- RS Stock No.:
- 348-899
- Mfr. Part No.:
- IPD047N03LF2SATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 4.7 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.
General purpose products
Excellent robustness
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
Related links
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