Infineon HEXFET N-Channel MOSFET, -160 A, -30 V DirectFET IRF9383MTRPBF
- RS Stock No.:
- 257-9333
- Mfr. Part No.:
- IRF9383MTRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD275.00
(exc. GST)
TWD288.76
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 4,774 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD137.50 | TWD275.00 |
| 50 - 98 | TWD131.00 | TWD262.00 |
| 100 - 498 | TWD122.50 | TWD245.00 |
| 500 - 1998 | TWD115.00 | TWD230.00 |
| 2000 + | TWD105.50 | TWD211.00 |
*price indicative
- RS Stock No.:
- 257-9333
- Mfr. Part No.:
- IRF9383MTRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | -160A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 113W | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id -160A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 113W | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -30V single p channel strong IRFET power mosfet in a direct FET mx package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High current rating
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No RoHS exemption)
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