Infineon HEXFET Type N-Channel MOSFET, 160 A, 60 V TO-263 IRFS3306TRLPBF
- RS Stock No.:
- 257-9424
- Mfr. Part No.:
- IRFS3306TRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD161.00
(exc. GST)
TWD169.04
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 742 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD80.50 | TWD161.00 |
| 10 - 48 | TWD80.00 | TWD160.00 |
| 50 - 98 | TWD78.50 | TWD157.00 |
| 100 - 248 | TWD64.50 | TWD129.00 |
| 250 + | TWD63.50 | TWD127.00 |
*price indicative
- RS Stock No.:
- 257-9424
- Mfr. Part No.:
- IRFS3306TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability lead free
RoHS compliant, halogen free
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB3306PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247 IRFP3306PBF
- Infineon HEXFET Type N-Channel MOSFET 40 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263 IRF2804STRL7PP