Infineon HEXFET N-Channel MOSFET, 160 A, 75 V DirectFET AUIRF7759L2TR

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Subtotal (1 reel of 4000 units)*

TWD751,200.00

(exc. GST)

TWD788,760.00

(inc. GST)

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Units
Per unit
Per Reel*
4000 +TWD187.80TWD751,200.00

*price indicative

RS Stock No.:
273-5218
Mfr. Part No.:
AUIRF7759L2TR
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

160A

Maximum Drain Source Voltage Vds

75V

Package Type

DirectFET

Series

HEXFET

Mount Type

Through Hole

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
MX
The Infineon Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging platform coupled with the latest silicon technology allows it to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC to DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on resistance and low Qg per silicon area. Additional features of this MOSFET are high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.

RoHS compliant

Dual sided cooling

High power density

Automotive qualified

Low parasitic parameters

Lead free and halogen free

Advanced process technology

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