Infineon HEXFET Type N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin IPAK IRLU8743PBF
- RS Stock No.:
- 495-760
- Distrelec Article No.:
- 304-29-640
- Mfr. Part No.:
- IRLU8743PBF
- Manufacturer:
- Infineon
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TWD262.00
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TWD275.10
(inc. GST)
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Last RS stock
- Final 115 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 15 | TWD52.40 | TWD262.00 |
| 20 + | TWD51.20 | TWD256.00 |
*price indicative
- RS Stock No.:
- 495-760
- Distrelec Article No.:
- 304-29-640
- Mfr. Part No.:
- IRLU8743PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 135W | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 135W | ||
Maximum Operating Temperature 175°C | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLU8743PBF
This MOSFET is an enhancement mode device designed for efficient switching applications. It utilises Advanced technology to perform well in high-frequency operations, making it suitable for power management in various industrial scenarios. With impressive specifications, it effectively manages significant current loads while maintaining low resistance, ensuring performance in various conditions.
Features & Benefits
• Low on-resistance reduces power loss during operation
• High continuous drain current of 160A supports substantial loads
• Voltage range up to 30V facilitates diverse applications
• Designed with an IPAK TO-251 package for straightforward installation
• Fully characterised avalanche capabilities enhance operational reliability
Applications
• High-frequency synchronous buck converters
• Isolated DC-DC converters in industrial environments
• Computer processor power management systems
• High current power supply
How does it perform in high-temperature environments?
The device operates within a temperature range of -55°C to +175°C, ensuring consistent performance in extreme conditions.
What is the significance of low RDS(on) for my design?
A low RDS(on) Value minimises conduction losses, promoting efficient energy use and effective thermal management, which is essential for high-current applications.
Can it be used in Pulse applications?
Yes, its design supports pulsed current handling, making it suitable for various applications requiring transient response.
What factors should I consider during installation?
It is important to ensure proper thermal management and verify compatibility with the circuit's voltage and current specifications to optimise performance.
Is there a need for additional components for gate control?
Incorporating gate drive circuits may be advantageous to enhance switching performance, especially in high-frequency applications.
Related links
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