Vishay Type N-Channel MOSFET, 24 A, 650 V TO-263 SIHB24N65E-GE3

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Subtotal (1 unit)*

TWD161.00

(exc. GST)

TWD169.05

(inc. GST)

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Units
Per unit
1 - 9TWD161.00
10 - 24TWD144.00
25 - 99TWD137.00
100 - 499TWD120.00
500 +TWD104.00

*price indicative

Packaging Options:
RS Stock No.:
256-7413
Mfr. Part No.:
SIHB24N65E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.033Ω

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Vishay Semiconductor E series power mosfet have low figure of merit (FOM) Ron x Qg and low input capacitance (Ciss).

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

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