Vishay E Type N-Channel Power MOSFET, 24 A, 650 V, 3-Pin TO-263 SIHB24N65E-GE3
- RS Stock No.:
- 256-7413
- Mfr. Part No.:
- SIHB24N65E-GE3
- Manufacturer:
- Vishay
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Subtotal (1 unit)*
TWD240.00
(exc. GST)
TWD252.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 979 unit(s) ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 9 | TWD240.00 |
| 10 - 24 | TWD215.00 |
| 25 - 99 | TWD204.00 |
| 100 - 499 | TWD179.00 |
| 500 + | TWD155.00 |
*price indicative
- RS Stock No.:
- 256-7413
- Mfr. Part No.:
- SIHB24N65E-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.145Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.145Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 24A Continuous Drain Current - SIHB24N65E-GE3
Features and Benefits:
• 24A continuous drain current for substantial load handling
• Rds(on) 0.145Ω reduces conduction losses under load
• 250W maximum dissipation for high-power thermal capability
• Vf 1.2V forward drop minimises diode conduction losses
• Gate charge 122nC supports predictable switching performance
Applications
• Ideal for industrial motor drive switching stages
• Used with LED drivers requiring high-voltage handling
• Can be used for power factor correction front-ends
• Suitable for inverter and UPS primary switching elements
What gate voltage limits should be observed during design?
How does the thermal environment affect continuous current capability?
What mounting method is required for PCB integration?
What ambient temperature extremes can the device tolerate in operation?
Related links
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