Vishay E Type N-Channel Power MOSFET, 15 A, 600 V, 3-Pin TO-263 SIHB15N60E-GE3
- RS Stock No.:
- 256-7411
- Mfr. Part No.:
- SIHB15N60E-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 2 units)*
TWD298.00
(exc. GST)
TWD312.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Plus 986 unit(s) shipping from August 19, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD149.00 | TWD298.00 |
| 10 - 18 | TWD133.50 | TWD267.00 |
| 20 - 98 | TWD132.50 | TWD265.00 |
| 100 - 498 | TWD126.00 | TWD252.00 |
| 500 + | TWD108.50 | TWD217.00 |
*price indicative
- RS Stock No.:
- 256-7411
- Mfr. Part No.:
- SIHB15N60E-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Maximum Power Dissipation Pd | 180W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Maximum Power Dissipation Pd 180W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHB15N60E-GE3
Features and Benefits:
• 15A continuous drain current supports substantial load currents
• Rds(on) 0.28Ω minimises conduction losses under load
• 180W power dissipation handles elevated thermal stress
• Gate charge 78nC at 30V Vgs allows predictable drive requirements
• TO‑263 surface package simplifies PCB assembly for power stages
Applications
• Ideal for motor-drive front-end switching stages
• Used for lighting ballast and industrial controls
• Can be used for power conversion in renewable inverters
• Used with thermal-management boards for high-power modules
What gate-drive voltage range should be observed?
How does the thermal environment affect reliability?
What package considerations are there for PCB design?
Is this suitable for automotive powertrain applications?
Related links
- Vishay E Type N-Channel Power MOSFET 600 V, 3-Pin TO-263 SIHB15N60E-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3
- Vishay E Type N-Channel Power MOSFET 650 V, 3-Pin TO-263 SIHB24N65E-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK
