Vishay E Type N-Channel Power MOSFET, 24 A, 650 V, 3-Pin TO-263 SIHB24N65E-GE3
- RS Stock No.:
- 256-7412
- Mfr. Part No.:
- SIHB24N65E-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD6,395.00
(exc. GST)
TWD6,715.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD127.90 | TWD6,395.00 |
| 100 - 450 | TWD124.10 | TWD6,205.00 |
| 500 - 950 | TWD120.40 | TWD6,020.00 |
| 1000 + | TWD118.00 | TWD5,900.00 |
*price indicative
- RS Stock No.:
- 256-7412
- Mfr. Part No.:
- SIHB24N65E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.145Ω | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.145Ω | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 24A Continuous Drain Current - SIHB24N65E-GE3
This power MOSFET is a high-voltage N-channel switching device designed for surface-mount power conversion and control applications. It operates across a wide temperature range and is intended for use where elevated voltage handling, substantial continuous current and compact board mounting are required.
Features and Benefits:
• 650V drain rating enabling high-voltage switching applications
• 24A continuous drain current for substantial load handling
• Rds(on) 0.145Ω reduces conduction losses under load
• 250W maximum dissipation for high-power thermal capability
• Vf 1.2V forward drop minimises diode conduction losses
• Gate charge 122nC supports predictable switching performance
• 24A continuous drain current for substantial load handling
• Rds(on) 0.145Ω reduces conduction losses under load
• 250W maximum dissipation for high-power thermal capability
• Vf 1.2V forward drop minimises diode conduction losses
• Gate charge 122nC supports predictable switching performance
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used with LED drivers requiring high-voltage handling
• Can be used for power factor correction front-ends
• Suitable for inverter and UPS primary switching elements
• Ideal for industrial motor drive switching stages
• Used with LED drivers requiring high-voltage handling
• Can be used for power factor correction front-ends
• Suitable for inverter and UPS primary switching elements
What gate voltage limits should be observed during design?
The device must not be driven beyond a maximum gate-to-source voltage of 30V to prevent gate-oxide stress.
How does the thermal environment affect continuous current capability?
The specified continuous drain current assumes adequate thermal management
without sufficient heat-sinking or PCB thermal vias, effective current capability will be reduced before reaching the 250W dissipation limit.
What mounting method is required for PCB integration?
It is supplied in a TO-263 package intended for surface-mount assembly and should be soldered to a board pad layout that provides thermal conduction to the copper plane.
What ambient temperature extremes can the device tolerate in operation?
The device is rated to operate from -55°C up to +150°C allowing use in environments with wide temperature variation.
Related links
- Vishay E Type N-Channel Power MOSFET 650 V, 3-Pin TO-263 SIHB24N65E-GE3
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel Power MOSFET 600 V, 3-Pin TO-263
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220AB
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220AB