Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- RS Stock No.:
- 210-4971
- Mfr. Part No.:
- SIHB17N80AE-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD3,280.00
(exc. GST)
TWD3,444.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 700 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD65.60 | TWD3,280.00 |
| 100 - 450 | TWD64.20 | TWD3,210.00 |
| 500 + | TWD57.70 | TWD2,885.00 |
*price indicative
- RS Stock No.:
- 210-4971
- Mfr. Part No.:
- SIHB17N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.61mm | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Height | 4.06mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 14.61mm | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Height 4.06mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 15A Continuous Drain Current - SIHB17N80AE-GE3
This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion duties in surface-mount applications. It operates across a wide temperature range and is intended for use where robust high-voltage switching, moderate current handling and compact SMD packaging are required.
Features and Benefits:
• 800V maximum drain-source voltage enabling high-voltage switching
• 15A continuous drain current for moderate load handling
• 250mΩ Rds(on) minimises conduction losses under load
• 179W power dissipation supports high-power operation
• 41nC typical gate charge for predictable switching behaviour
• 30V maximum gate-source voltage ensures gate drive margin
• 15A continuous drain current for moderate load handling
• 250mΩ Rds(on) minimises conduction losses under load
• 179W power dissipation supports high-power operation
• 41nC typical gate charge for predictable switching behaviour
• 30V maximum gate-source voltage ensures gate drive margin
Applications
• Suitable for SMPS primary-side high-voltage switching
• Ideal for industrial high-voltage power stages
• Used with boost converters requiring 800V devices
• Can be used for power-factor correction front ends
• Ideal for industrial high-voltage power stages
• Used with boost converters requiring 800V devices
• Can be used for power-factor correction front ends
What thermal extremes can this device withstand in operation?
It is specified to operate from -55°C up to 150°C, allowing use in environments with large temperature variations.
What package and mounting style should I plan for on the board?
The device is supplied in a TO-263 package intended for surface mounting to heatsinking areas on the board.
How many electrical connections does it present for layout considerations?
The component has three pins, corresponding to the gate, drain and source terminations for PCB routing.
What is the channel mode and how does it affect switching?
The transistor is an enhancement-mode N-channel device, requiring a positive gate drive relative to the source to switch on.
Related links
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