Vishay E Type N-Channel Power MOSFET, 15 A, 600 V, 3-Pin TO-263 SIHB15N60E-GE3
- RS Stock No.:
- 256-7410
- Mfr. Part No.:
- SIHB15N60E-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD4,210.00
(exc. GST)
TWD4,420.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD84.20 | TWD4,210.00 |
| 100 - 450 | TWD79.50 | TWD3,975.00 |
| 500 - 950 | TWD68.80 | TWD3,440.00 |
| 1000 + | TWD66.70 | TWD3,335.00 |
*price indicative
- RS Stock No.:
- 256-7410
- Mfr. Part No.:
- SIHB15N60E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Power Dissipation Pd | 180W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Power Dissipation Pd 180W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Drain Source Voltage, 15A Continuous Drain Current - SIHB15N60E-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion tasks in industrial electronics. It operates across a wide temperature range and is supplied in a Compact surface-mount package suitable for thermal management in board-level power assemblies.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications • 15A continuous current supports medium-power loads • 0.28 Ω on-resistance reduces conduction losses • 78 nC typical gate charge allows predictable switching behaviour • 180W power dissipation supports elevated load handling • 150 °C maximum operating temperature endures high thermal stress
Applications
• Suitable for high-voltage power supplies and converters • Ideal for motor-drive switching in automation systems • Used for industrial lighting and ballast-control circuits • Can be used for energy management and inverter stages • Used with heat-sinked boards in power-distribution modules
What gate voltage limits should be observed during design?
The device must not be subjected to gate-source voltages exceeding 30V to avoid gate-oxide stress.
How should thermal conditions be managed on a PCB?
Design a dedicated copper pad and heat-spreading area for the TO-263 package to maintain junction temperatures below rated limits under specified power dissipation.
What environmental temperature range can components be expected to tolerate?
It is specified to operate down to -55 °C and up to +150 °C, making it suitable for harsh ambient conditions and elevated junction scenarios.
Is this device matched to automotive specification levels?
It is not classified as an automotive-grade component and should be evaluated accordingly for vehicle applications.
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