Vishay Type N-Channel MOSFET, 15 A, 600 V TO-263
- RS Stock No.:
- 256-7410
- Mfr. Part No.:
- SIHB15N60E-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
TWD3,760.00
(exc. GST)
TWD3,948.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD75.20 | TWD3,760.00 |
| 100 - 450 | TWD71.00 | TWD3,550.00 |
| 500 - 950 | TWD61.40 | TWD3,070.00 |
| 1000 + | TWD59.60 | TWD2,980.00 |
*price indicative
- RS Stock No.:
- 256-7410
- Mfr. Part No.:
- SIHB15N60E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor E series power mosfet D2PAK is the most commonly used power devices due to their low gate drive power, fast switching speed and superior paralleling capability.
Low figure-of-merit Ron x Qg
Low input capacitance
Reduced switching and conduction losses
Ultra low gate charge
Avalanche energy rated
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