Vishay SQJ Type N-Channel MOSFET, 210 A, 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3
- RS Stock No.:
- 239-5409
- Mfr. Part No.:
- SQJ182EP-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD192.00
(exc. GST)
TWD201.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Supply shortage
- 3,000 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD38.40 | TWD192.00 |
| 50 - 95 | TWD37.20 | TWD186.00 |
| 100 - 245 | TWD36.20 | TWD181.00 |
| 250 - 995 | TWD35.20 | TWD176.00 |
| 1000 + | TWD34.20 | TWD171.00 |
*price indicative
- RS Stock No.:
- 239-5409
- Mfr. Part No.:
- SQJ182EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SQJ | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.005Ω | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 395W | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Width | 4.9 mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SQJ | ||
Package Type PowerPAK SO-8L | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.005Ω | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 395W | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Width 4.9 mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Vishay N channel MOSFET has drain current of 210 A.
AEC-Q101 qualified
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching characteristics
Related links
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