Vishay SQJ Type N-Channel MOSFET, 66 A, 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- RS Stock No.:
- 268-8366
- Mfr. Part No.:
- SQJ186ELP-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD239.00
(exc. GST)
TWD251.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD23.90 | TWD239.00 |
| 50 - 90 | TWD23.40 | TWD234.00 |
| 100 - 240 | TWD18.80 | TWD188.00 |
| 250 + | TWD18.30 | TWD183.00 |
*price indicative
- RS Stock No.:
- 268-8366
- Mfr. Part No.:
- SQJ186ELP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8L | |
| Series | SQJ | |
| Mount Type | PCB | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 135W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 4.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8L | ||
Series SQJ | ||
Mount Type PCB | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 135W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 4.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is single configuration device and that has independent of operating temperature.
AEC Q101 qualified
ROHS compliant
UIS tested 100 percent
Related links
- Vishay SQJ Type N-Channel MOSFET 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- Vishay SQJ Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3
- Vishay Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK SO-8L
- Vishay Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK SO-8L SQJ154EP-T1_GE3
- Vishay Single SQJ 1 Type P-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8L
- Vishay Single SQJ 1 Type P-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3
- Vishay SiJA Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- Vishay Type N-Channel MOSFET 30 V Depletion, 4-Pin PowerPAK SO-8L