Infineon CoolMOS P6 N-Channel MOSFET, 13.8 A, 600 V Enhancement, 3-Pin TO-247 IPW60R280P6FKSA1

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Subtotal (1 tube of 30 units)*

TWD1,608.00

(exc. GST)

TWD1,688.40

(inc. GST)

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Units
Per unit
Per Tube*
30 - 30TWD53.60TWD1,608.00
60 - 90TWD52.00TWD1,560.00
120 +TWD47.90TWD1,437.00

*price indicative

RS Stock No.:
218-3088
Mfr. Part No.:
IPW60R280P6FKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13.8A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS P6

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

25.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

900mV

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

16.13mm

Height

21.1mm

Width

5.21mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P6 series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. It is used in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.

Increased MOSFET dv/dt ruggedness

Very high commutation ruggedness

Easy to use/drive

Pb-free plating, Halogen free mold compound

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