Infineon CoolMOS P6 N-Channel MOSFET, 23.8 A, 600 V Enhancement, 3-Pin TO-220 IPP60R160P6XKSA1

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Subtotal (1 tube of 50 units)*

TWD3,845.00

(exc. GST)

TWD4,037.00

(inc. GST)

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Units
Per unit
Per Tube*
50 - 50TWD76.90TWD3,845.00
100 - 150TWD75.20TWD3,760.00
200 +TWD73.00TWD3,650.00

*price indicative

RS Stock No.:
214-9092
Mfr. Part No.:
IPP60R160P6XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23.8A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS P6

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

176W

Typical Gate Charge Qg @ Vgs

44nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

900mV

Maximum Gate Source Voltage Vgs

20V

Height

9.45mm

Width

4.57mm

Standards/Approvals

No

Length

10.36mm

Automotive Standard

No

The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Easy to use/drive

Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)

Very high commutation ruggedness

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