Infineon CoolMOS P6 N-Channel MOSFET, 22.4 A, 600 V Enhancement, 5-Pin VSON IPL60R180P6AUMA1

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Subtotal (1 pack of 5 units)*

TWD405.00

(exc. GST)

TWD425.25

(inc. GST)

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Units
Per unit
Per Pack*
5 - 745TWD81.00TWD405.00
750 +TWD78.80TWD394.00

*price indicative

Packaging Options:
RS Stock No.:
214-9074
Mfr. Part No.:
IPL60R180P6AUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

22.4A

Maximum Drain Source Voltage Vds

600V

Package Type

VSON

Series

CoolMOS P6

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

176W

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

44nC

Forward Voltage Vf

900mV

Height

1.1mm

Length

8.1mm

Width

8.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Increased MOSFET dv/dt ruggedness

Easy to use/drive

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