Infineon CoolMOS P6 N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1

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Subtotal (1 tube of 30 units)*

TWD2,811.00

(exc. GST)

TWD2,951.40

(inc. GST)

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Units
Per unit
Per Tube*
30 - 120TWD93.70TWD2,811.00
150 +TWD90.00TWD2,700.00

*price indicative

RS Stock No.:
145-8600
Mfr. Part No.:
IPW60R190P6FKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS P6

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

151W

Maximum Gate Source Voltage Vgs

-30V, +30V

Forward Voltage Vf

900mV

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.21mm

Standards/Approvals

No

Length

16.13mm

Height

21.1mm

Automotive Standard

No

COO (Country of Origin):
MY

Infineon CoolMOS™E6/P6 series Power MOSFET


The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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