Infineon CoolMOS P6 N-Channel MOSFET, 53.5 A, 600 V Enhancement, 3-Pin TO-247 IPZ60R070P6FKSA1
- RS Stock No.:
- 214-9120
- Mfr. Part No.:
- IPZ60R070P6FKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
TWD6,018.00
(exc. GST)
TWD6,318.90
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD200.60 | TWD6,018.00 |
| 60 - 90 | TWD196.30 | TWD5,889.00 |
| 120 + | TWD191.90 | TWD5,757.00 |
*price indicative
- RS Stock No.:
- 214-9120
- Mfr. Part No.:
- IPZ60R070P6FKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 53.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Power Dissipation Pd | 391W | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Width | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 53.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Power Dissipation Pd 391W | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Width 5.21mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Easy to use/drive due to driver source pin for better control of the gate
Qualified for industrial grade applications according to JEDEC
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