Vishay SiSS05DN Type P-Channel MOSFET, 108 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS05DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

TWD75,600.00

(exc. GST)

TWD79,380.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000TWD25.20TWD75,600.00
6000 +TWD24.50TWD73,500.00

*price indicative

RS Stock No.:
188-4900
Mfr. Part No.:
SiSS05DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSS05DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

76nC

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.1V

Maximum Gate Source Voltage Vgs

-20V, +16V

Maximum Operating Temperature

150°C

Width

3.3mm

Standards/Approvals

No

Length

3.3mm

Height

780μm

Automotive Standard

No

P-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV p-channel power MOSFET

Provides exceptionally low RDS(on) in a compact package that is thermally enhanced

Enables higher power density

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