Vishay SiSS61DN Type P-Channel MOSFET, 111.9 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS61DN-T1-GE3

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RS Stock No.:
188-4905
Mfr. Part No.:
SiSS61DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

111.9A

Maximum Drain Source Voltage Vds

20V

Series

SiSS61DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8V

Typical Gate Charge Qg @ Vgs

154nC

Maximum Power Dissipation Pd

65.8W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Height

780μm

Length

3.3mm

Width

3.3mm

Standards/Approvals

No

Automotive Standard

No

P-Channel 20 V (D-S) MOSFET.

TrenchFET® Gen III p-channel power MOSFET

Leadership RDS(on) in compact and thermally enhanced package

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