Vishay Si7121DN Type P-Channel MOSFET, 9.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SI7121DN-T1-GE3
- RS Stock No.:
- 818-1380
- Mfr. Part No.:
- SI7121DN-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD375.00
(exc. GST)
TWD393.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 3,740 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD37.50 | TWD375.00 |
| 750 - 1490 | TWD36.70 | TWD367.00 |
| 1500 + | TWD36.10 | TWD361.00 |
*price indicative
- RS Stock No.:
- 818-1380
- Mfr. Part No.:
- SI7121DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | Si7121DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 27.8W | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.15mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Width | 3.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series Si7121DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 27.8W | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.15mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Width 3.15 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
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