Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP BSL215CH6327XTSA1

RS Stock No.:: 166-1086
Mfr. Part No.:: BSL215CH6327XTSA1
Manufacturer:: Infineon

Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP BSL215CH6327XTSA1

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Subtotal (1 reel of 3000 units)*

TWD23,100.00

(exc. GST)

TWD24,240.00

(inc. GST)

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Units	Per unit	Per Reel*
3000 - 3000	TWD7.70	TWD23,100.00
6000 +	TWD7.50	TWD22,500.00

*price indicative

RS Stock No.:: 166-1086
Mfr. Part No.:: BSL215CH6327XTSA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	1.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	TSOP
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500mW
	Maximum Gate Source Voltage Vgs	-12V, +12V
	Forward Voltage Vf	800mV
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	2.9mm
	Width	1.6mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 1.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type TSOP
	Series OptiMOS
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500mW
	Maximum Gate Source Voltage Vgs -12V, +12V
	Forward Voltage Vf 800mV
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 2.9mm
	Width 1.6mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

COO (Country of Origin):: MY

Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSL215CH6327XTSA1

This MOSFET is a compact surface-mounted power transistor device designed for switching and amplification in automotive and industrial contexts. It comprises paired transistor elements in an isolated configuration to support complementary applications where both P‑channel and N‑channel operation is required. The component is tailored for use on printed circuit boards where a small footprint and industry-specific reliability are important.

Features and Benefits:

• Low gate charge of 3 nC enables faster switching performance
• Maximum continuous drain current of 1.5A supports moderate-load circuits
• Drain-source resistance of 280 mΩ reduces conduction losses
• Rated for 20V drain-source voltage for low-voltage systems
• Power dissipation of 500 mW manages thermal load in compact designs
• Qualified to AEC‑Q101 for elevated automotive stress tolerance

Applications

• Suitable for automotive signal switching and control circuits
• Used with battery management and power-distribution modules
• Ideal for compact DC‑DC converters and voltage regulators
• Can be used for load switching in infotainment subsystems
• Appropriate for embedded motor-control driver stages

What temperature range can it operate within reliably?

It functions across -55 °C to 150 °C, enabling use from cold starts to high under‑bonnet temperatures.

How many transistor elements are provided on the chip?

The device contains two elements per chip arranged in an isolated configuration for flexible circuit topologies.

What package and pin count should designers plan for?

It is supplied in a TSOP package with six pins for surface mounting and layout planning.

Which gate‑source and forward voltage limits must be observed?

The maximum gate‑source voltage is 12V and the forward voltage is 0.8V for diode conduction considerations.