Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1

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TWD456.00

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TWD478.80

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60 - 720TWD7.60TWD456.00
780 - 1440TWD7.40TWD444.00
1500 +TWD7.00TWD420.00

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Packaging Options:
RS Stock No.:
110-7129
Distrelec Article No.:
304-36-975
Mfr. Part No.:
BSL316CH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

30V

Package Type

TSOP-6

Series

OptiMOS™

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2.4nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.86V

Maximum Power Dissipation Pd

500mW

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

1.6 mm

Height

1mm

Length

2.9mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Infineon OptiMOS™ Dual Power MOSFET


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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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