Infineon Isolated OptiMOS 2 2 N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1
- RS Stock No.:
- 165-5872
- Mfr. Part No.:
- BSD235NH6327XTSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD11,400.00
(exc. GST)
TWD11,970.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 6,000 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD3.80 | TWD11,400.00 |
| 6000 - 9000 | TWD3.60 | TWD10,800.00 |
| 12000 + | TWD3.50 | TWD10,500.00 |
*price indicative
- RS Stock No.:
- 165-5872
- Mfr. Part No.:
- BSD235NH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS 2 | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.32nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 800μm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Width | 1.25mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS 2 | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.32nC | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 800μm | ||
Length 2mm | ||
Standards/Approvals No | ||
Width 1.25mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 600mΩ Maximum Drain Source Resistance - BSD235NH6327XTSA1
This MOSFET is a compact, surface-mounted N-channel transistor designed for switching and power-management tasks in automotive and industrial environments. It operates as an enhancement-mode device with an isolated transistor configuration and is intended for applications requiring low gate charge switching and thermal endurance at elevated temperatures.
Features and Benefits:
• 20V maximum drain voltage enables safe low-voltage switching
• 600 mΩ RDS(on) reduces conduction losses during operation
• 0.32 nC typical gate charge delivers fast, low-driving-energy switching
• 950 mA continuous drain current supports modest load currents
• 500 mW power dissipation allows sustained operation under load
• AEC‑Q101 qualification suits automotive electronics testing
• 600 mΩ RDS(on) reduces conduction losses during operation
• 0.32 nC typical gate charge delivers fast, low-driving-energy switching
• 950 mA continuous drain current supports modest load currents
• 500 mW power dissipation allows sustained operation under load
• AEC‑Q101 qualification suits automotive electronics testing
Applications
• Suitable for supply-rail switching in automotive modules
• Ideal for load switching in body-control units
• Used for gate drivers and secondary-side power stages
• Can be used for compact power management in ubiquitous SMD designs
• Appropriate for dual-channel switching in sensor interfaces
• Ideal for load switching in body-control units
• Used for gate drivers and secondary-side power stages
• Can be used for compact power management in ubiquitous SMD designs
• Appropriate for dual-channel switching in sensor interfaces
What gate-drive limits should be observed for safe operation?
The device accepts gate-source voltages up to 12V maximum
ensure drive circuits remain within this limit to avoid gate-oxide stress.
How does thermal range affect placement in designs?
It operates between -55 °C and 150 °C, permitting placement near heat‑generating components but still requiring thermal consideration for PCB copper area and airflow to manage 500 mW dissipation.
How many discrete elements are provided on the die?
The chip contains two elements, useful where paired switching channels are needed in a single package.
What physical package constraints influence PCB layout?
The component is supplied in an SC-88 package with six pins, so footprint planning must accommodate the small SMD pin array and clearance for solder fillets.
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