Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP BSL215CH6327XTSA1
- RS Stock No.:
- 110-7726
- Distrelec Article No.:
- 304-36-974
- Mfr. Part No.:
- BSL215CH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 60 units)*
TWD1,218.00
(exc. GST)
TWD1,279.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 17,520 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 60 - 720 | TWD20.30 | TWD1,218.00 |
| 780 - 1440 | TWD19.80 | TWD1,188.00 |
| 1500 + | TWD18.50 | TWD1,110.00 |
*price indicative
- RS Stock No.:
- 110-7726
- Distrelec Article No.:
- 304-36-974
- Mfr. Part No.:
- BSL215CH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 500mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 500mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSL215CH6327XTSA1
This MOSFET is a compact surface-mounted power transistor device designed for switching and amplification in automotive and industrial contexts. It comprises paired transistor elements in an isolated configuration to support complementary applications where both P‑channel and N‑channel operation is required. The component is tailored for use on printed circuit boards where a small footprint and industry-specific reliability are important.
Features and Benefits:
• Low gate charge of 3 nC enables faster switching performance
• Maximum continuous drain current of 1.5A supports moderate-load circuits
• Drain-source resistance of 280 mΩ reduces conduction losses
• Rated for 20V drain-source voltage for low-voltage systems
• Power dissipation of 500 mW manages thermal load in compact designs
• Qualified to AEC‑Q101 for elevated automotive stress tolerance
• Maximum continuous drain current of 1.5A supports moderate-load circuits
• Drain-source resistance of 280 mΩ reduces conduction losses
• Rated for 20V drain-source voltage for low-voltage systems
• Power dissipation of 500 mW manages thermal load in compact designs
• Qualified to AEC‑Q101 for elevated automotive stress tolerance
Applications
• Suitable for automotive signal switching and control circuits
• Used with battery management and power-distribution modules
• Ideal for compact DC‑DC converters and voltage regulators
• Can be used for load switching in infotainment subsystems
• Appropriate for embedded motor-control driver stages
• Used with battery management and power-distribution modules
• Ideal for compact DC‑DC converters and voltage regulators
• Can be used for load switching in infotainment subsystems
• Appropriate for embedded motor-control driver stages
What temperature range can it operate within reliably?
It functions across -55 °C to 150 °C, enabling use from cold starts to high under‑bonnet temperatures.
How many transistor elements are provided on the chip?
The device contains two elements per chip arranged in an isolated configuration for flexible circuit topologies.
What package and pin count should designers plan for?
It is supplied in a TSOP package with six pins for surface mounting and layout planning.
Which gate‑source and forward voltage limits must be observed?
The maximum gate‑source voltage is 12V and the forward voltage is 0.8V for diode conduction considerations.
Related links
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP
- Infineon Isolated OptiMOS™ 2 Type N 1.5 A 6-Pin TSOP-6 BSL316CH6327XTSA1
- Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP
- Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP BSL308PEH6327XTSA1
- Infineon Isolated OptiMOS 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-88
- Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-88
- Infineon Isolated OptiMOS 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-88 2N7002DWH6327XTSA1
- Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1