Vishay TrenchFET N channel-Channel MOSFET, 471 A, 40 V Enhancement, 8-Pin PowerPack SIRS4400EPW-T1-RE3
- RS Stock No.:
- 931-772
- Mfr. Part No.:
- SIRS4400EPW-T1-RE3
- Manufacturer:
- Vishay
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- RS Stock No.:
- 931-772
- Mfr. Part No.:
- SIRS4400EPW-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 471A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPack | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00058Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 205W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | ROHS | |
| Length | 6mm | |
| Width | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 471A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPack | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00058Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 205W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals ROHS | ||
Length 6mm | ||
Width 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET is a high-performance component designed for efficient energy management. This device excels in power dissipation, minimising conduction loss in various demanding applications.
TrenchFET Gen IV design ensures superior efficiency
Very low RDS(on) enhances power loss minimisation
Robust performance tested for Rg and UIS
Wettable flank design improves soldering reliability
Rated for a maximum drain-source voltage of 40 V
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