Vishay TrenchFET N channel-Channel MOSFET, 235 A, 60 V Enhancement, 8-Pin PowerPack SIDR4612LEP-T1-RE3

N
Bulk discount available
View bulk pricing options

Subtotal (1 tape of 1 unit)*

TWD108.00

(exc. GST)

TWD113.40

(inc. GST)

Add to Basket
Select or type quantity
New product - Preorder today
  • Shipping from December 13, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Tape(s)
Per Tape
1 - 9TWD108.00
10 - 24TWD70.00
25 - 99TWD42.00
100 - 499TWD41.00
500 +TWD40.00

*price indicative

RS Stock No.:
931-769
Mfr. Part No.:
SIDR4612LEP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

235A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

PowerPack

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00135Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

53nC

Maximum Operating Temperature

175°C

Length

6mm

Standards/Approvals

ROHS

Width

5mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET designed to efficiently manage power in high-performance applications. Its robust specifications enable reliable operation in demanding environments, making it suitable for various electrical tasks.

Operates with a high drain-source voltage of 60V, ensuring versatility across applications

Offers a low on-resistance of 0.00135Ohm at 10V, leading to improved energy efficiency

Continuous drain currents reach up to 235A, suitable for significant load requirements

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy