Vishay TrenchFET N-Channel MOSFET, 330 A, 60 V Enhancement, 8-Pin PowerPAK SIRS4614EPW-T1-RE3
- RS Stock No.:
- 904-978
- Mfr. Part No.:
- SIRS4614EPW-T1-RE3
- Manufacturer:
- Vishay
N
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- RS Stock No.:
- 904-978
- Mfr. Part No.:
- SIRS4614EPW-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 330A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.000995Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 205W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Width | 5mm | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 330A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.000995Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 205W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Width 5mm | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay power MOSFET designed for high-efficiency operations, specifically tackling power losses associated with conduction in electronic applications. This component is characterised by its robust construction and durability under varying conditions.
TrenchFET Gen IV technology ensures excellent performance with minimal power loss
Rated for a drain-source voltage of 60 V, providing stability in high-voltage environments
Low on-state resistance maximises efficiency in power management applications
Designed with enhanced power dissipation capabilities for reduced thermal issues
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