Vishay TrenchFET N channel-Channel MOSFET, 267 A, 100 V Enhancement, 8-Pin PowerPack SIEH3114EW-T1-GE3
- RS Stock No.:
- 931-770
- Mfr. Part No.:
- SIEH3114EW-T1-GE3
- Manufacturer:
- Vishay
N
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 10 more to save 38%
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
TWD215.00
(exc. GST)
TWD225.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
New product - Preorder today
- Shipping from December 13, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape | Saving |
|---|---|---|
| 1 - 9 | TWD215.00 | - |
| 10 - 49 | TWD133.00 | 38% |
| 50 - 99 | TWD81.00 | 62% |
| 100 + | TWD79.00 | 63% |
*price indicative
- RS Stock No.:
- 931-770
- Mfr. Part No.:
- SIEH3114EW-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 267A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPack | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00255Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 417W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | ROHS | |
| Width | 8mm | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 267A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPack | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00255Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 417W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals ROHS | ||
Width 8mm | ||
Length 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay MOSFET is a high-performance, N-Channel device designed for efficient power management, capable of handling 100 V drain-source voltage with maximum continuous drain current of up to 322 A.
TrenchFET Gen III technology ensures low RDS(on) for improved efficiency
Fully lead (Pb)-free and halogen-free device, enhancing environmental compliance
Optimised safe operating area allows for reliable performance under varying conditions
Wettable flanks improve solderability, providing robust assembly characteristics
Related links
- Vishay TrenchFET N channel-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack SIEH3716EW-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPack SIRS510EPW-T1-RE3
- Vishay TrenchFET N channel-Channel MOSFET 250 V Enhancement, 8-Pin PowerPack SISS92DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPack SIRS4400EPW-T1-RE3
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPack SIDR4612LEP-T1-RE3
- Vishay TrenchFET N channel-Channel MOSFET 250 V Enhancement, 8-Pin PowerPack SISS92DN-T1-BE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPack SI7913BDN-T1-GE3
- Vishay Dual SI7997DP N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3