Vishay TrenchFET P-Channel MOSFET, -6 A, -20 V Enhancement, 8-Pin PowerPack SI7913BDN-T1-GE3
- RS Stock No.:
- 931-767
- Mfr. Part No.:
- SI7913BDN-T1-GE3
- Manufacturer:
- Vishay
N
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| 100 + | TWD7.00 |
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- RS Stock No.:
- 931-767
- Mfr. Part No.:
- SI7913BDN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -6A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Series | TrenchFET | |
| Package Type | PowerPack | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.025Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 19.8nC | |
| Maximum Power Dissipation Pd | 19.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -6A | ||
Maximum Drain Source Voltage Vds -20V | ||
Series TrenchFET | ||
Package Type PowerPack | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.025Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 19.8nC | ||
Maximum Power Dissipation Pd 19.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Length 3.3mm | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay power MOSFET provides dual P-Channel functionality with a 20V (D-S) rating, designed for efficient switching applications.
TrenchFET Gen IV technology ensures superior efficiency
100% R and UIS tested for reliable performance
62% smaller package footprint than conventional designs
Thermally enhanced PowerPAK package guarantees optimal heat dissipation
Lead-free and halogen-free for environmentally conscious applications
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