Vishay TrenchFET N channel-Channel Power MOSFET, 116 A, 80 V N, 8-Pin PowerPAK SIRS5800LEPW-T1RE3
- RS Stock No.:
- 851-507
- Mfr. Part No.:
- SIRS5800LEPW-T1RE3
- Manufacturer:
- Vishay
N
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TWD113.00
(exc. GST)
TWD118.65
(inc. GST)
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- Shipping from August 17, 2027
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | TWD113.00 |
| 10 - 24 | TWD73.00 |
| 25 + | TWD43.00 |
*price indicative
- RS Stock No.:
- 851-507
- Mfr. Part No.:
- SIRS5800LEPW-T1RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 116A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0039Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 92.5W | |
| Typical Gate Charge Qg @ Vgs | 44.5nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 116A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0039Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 92.5W | ||
Typical Gate Charge Qg @ Vgs 44.5nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay high-performance N-Channel MOSFET designed for efficient power management. It operates effectively at 80V with a maximum junction temperature of 175°C, providing reliable and robust functionality in various applications.
TrenchFET Gen V technology ensures excellent performance and efficiency
Very low on-state resistance reduces power loss during conduction
100% tested for R and UIS, guaranteeing high reliability
Improved thermal performance with enhanced power dissipation capabilities
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