Vishay TrenchFET N channel-Channel Power MOSFET, 100 A, 60 V N, 8-Pin PowerPAK SIR692DP-T1-UE3
- RS Stock No.:
- 851-506
- Mfr. Part No.:
- SIR692DP-T1-UE3
- Manufacturer:
- Vishay
N
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TWD77.00
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | TWD77.00 |
| 10 - 24 | TWD50.00 |
| 25 - 99 | TWD30.00 |
| 100 + | TWD29.00 |
*price indicative
- RS Stock No.:
- 851-506
- Mfr. Part No.:
- SIR692DP-T1-UE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0048Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 63.5nC | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.05mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1.04mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0048Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 63.5nC | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.05mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1.04mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay high-performance MOSFET designed for efficient switching capabilities in power management applications. Its robust construction ensures reliability and optimal functionality in various demanding environments.
N-Channel configuration providing superior operational efficiency
ThunderFET technology enhances performance by optimising the balance of on-resistance and switching characteristics
Offers a maximum drain-source voltage of 250 V, ensuring suitability for high-voltage applications
Designed with a maximum continuous drain current of 24.2 A, accommodating extensive load conditions
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